GaAs
Advanced Materials & Semiconductors
Gallium Arsenide
Gallium arsenide is a direct-bandgap semiconductor essential for optoelectronic devices, high-efficiency solar cells, and RF/microwave applications. Our high-purity GaAs provides superior performance for photonic and electronic devices.
Atomic #
0
Atomic Wt
69.72 (Ga) / 74.92 (As)
CAS #
1303-00-0
Purity
99+%
Available Forms
Wafer
Ingot
Powder
Sputtering Targets
Purity Grades
99.9999%
99.99999%
Applications
Semiconductor
- ✓Optoelectronic devices
- ✓Solar cells
- ✓RF circuits
Aerospace
- ✓Radiation-hardened electronics
Optical & Display
- ✓Laser diodes
- ✓LEDs
- ✓Photodiodes
Technical Specifications
| Bandgap Energy | 1.42 eV (direct) |
| Melting Point | 1238°C |
| Density | 5.316 g/cm³ |
| Electron Mobility | 8500 cm²/V·s @ 300K |
| Thermal Conductivity | 46 W/m·K @ 300K |
Storage Requirements
Store in cleanroom environment or sealed containers. Maintain low humidity. Standard shelf life: indefinite.
Packaging Options
- •Wafer carriers
- •100g ingots
- •Research quantities
- •Custom specifications
Request Gallium Arsenide
Get a custom quote or learn more about our gallium arsenide supply options.