SiC
Advanced Materials
Silicon Carbide
Silicon carbide is a compound semiconductor with excellent thermal properties and high breakdown field strength. Our high-purity SiC serves advanced semiconductor applications, high-temperature electronics, and abrasive applications. Available in multiple crystal structures (α-SiC and β-SiC).
Atomic #
0
Atomic Wt
28.09 (Si) / 12.01 (C)
CAS #
409-21-2
Purity
99+%
Available Forms
Powder
Wafers
Crystals
Granules
Nanoparticles
Purity Grades
99.5%
99.9%
99.99%
Applications
Semiconductor
- ✓Wide-bandgap power devices
- ✓High-frequency RF semiconductors
- ✓UV detectors
Permanent Magnets
- ✓Permanent fixture substrates
Optical & Display
- ✓Substrate material
- ✓Optical windows
- ✓Thermal management
Technical Specifications
| Density | 3.21 g/cm³ |
| Bandgap Energy | 3.26 eV (indirect), 3.33 eV (direct) |
| Melting Point | 2700°C (decomposes) |
| Thermal Conductivity | 120 W/m·K @ 300K |
| Hardness (Mohs) | 9.5 |
Storage Requirements
Room temperature storage in sealed containers. Protect from moisture and contamination. Shelf life: indefinite.
Packaging Options
- •25 kg bags
- •50 kg vacuum drums
- •Specialty wafer cases
- •Custom specifications
Request Silicon Carbide
Get a custom quote or learn more about our silicon carbide supply options.