GaAs
Precision Substrates
Gallium Arsenide (GaAs) Wafer
Ultra-pure gallium arsenide wafers for high-efficiency solar cells, optoelectronic devices, and RF/microwave applications. Our GaAs substrates feature exceptional crystalline quality and superior electronic properties.
Atomic #
0
Atomic Wt
69.72 (Ga) / 74.92 (As)
CAS #
1303-00-0
Purity
99+%
Available Forms
2-inch wafers
3-inch wafers
4-inch wafers
Purity Grades
99.9999%
99.99999%
Research Grade
Applications
Semiconductor
- ✓RF integrated circuits
- ✓Solar cells
Aerospace
- ✓High-efficiency solar arrays
- ✓Radiation-hardened ICs
Optical & Display
- ✓Laser diodes
- ✓LEDs
- ✓Photodiodes
Technical Specifications
| Crystal Structure | Zinc-Blende (Cubic) |
| Bandgap Energy | 1.42 eV (direct) |
| Dislocation Density | <10⁴ cm⁻² |
| Electron Mobility | 8500 cm²/V·s @ 300K |
| Thermal Conductivity | 46 W/m·K @ 300K |
Storage Requirements
Store in sealed ESD-safe containers. Room temperature in inert atmosphere preferred. Maintain low humidity. Protect from mechanical stress.
Packaging Options
- •ESD-safe wafer carriers
- •Ultra-clean packaging
- •Inert gas protection
- •Research-grade cases
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