InP
Precision Substrates
Indium Phosphide (InP) Wafer
Premium indium phosphide wafers for advanced optoelectronic devices and ultra-high-speed integrated circuits. Our InP substrates feature exceptional crystal quality and low defect density, essential for fiber-optic communications and specialized RF applications.
Atomic #
0
Atomic Wt
114.82 (In) / 30.97 (P)
CAS #
22541-49-3
Purity
99+%
Available Forms
2-inch wafers
3-inch wafers
4-inch wafers
Purity Grades
99.9999%
99.99999%
Research Grade
Applications
Semiconductor
- ✓High-electron-mobility transistors (HEMTs)
- ✓Integrated circuits
Aerospace
- ✓Radiation-hardened electronics
Optical & Display
- ✓Laser diodes
- ✓Photodetectors
- ✓Photonic ICs
Technical Specifications
| Crystal Structure | Zinc-Blende (Cubic) |
| Bandgap Energy | 1.35 eV (direct) |
| Dislocation Density | <10⁴ cm⁻² |
| Electron Mobility | 4600 cm²/V·s @ 300K |
| Thermal Conductivity | 68 W/m·K @ 300K |
Storage Requirements
Store in sealed ESD-safe containers in inert atmosphere. Room temperature storage. Maintain low humidity. Handle with extreme care to avoid mechanical damage.
Packaging Options
- •ESD-safe wafer cases
- •Ultra-clean packaging
- •Nitrogen-purged containers
- •Research-grade handling
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