SiC
Precision Substrates
Silicon Carbide (SiC) Wafer
Premium silicon carbide wafers engineered for extreme-environment semiconductor applications. Our SiC substrates feature low defect density and superior thermal properties. Ideal for high-temperature sensors, power electronics, and RF devices operating beyond silicon capabilities.
Atomic #
0
Atomic Wt
40.10
CAS #
409-21-2
Purity
99+%
Available Forms
2-inch wafers
3-inch wafers
4-inch wafers
6-inch wafers
Purity Grades
99.5%
99.9%
99.99%
Applications
Semiconductor
- ✓Power devices (MOSFETs)
- ✓Schottky diodes
- ✓JFETs
Aerospace
- ✓High-temperature electronics
Optical & Display
- ✓UV detectors
- ✓Thermal management
Technical Specifications
| Crystal Structure | 3C, 4H, or 6H (specified) |
| Bandgap Energy | 3.26 eV (4H-SiC) |
| Defect Density | <10⁵ cm⁻² (best grades) |
| Breakdown Field Strength | 3.2 MV/cm |
| Thermal Conductivity | 490 W/m·K (4H) @ 300K |
Storage Requirements
Store in dry, inert atmosphere when possible. Room temperature storage in sealed, cleanroom-compatible containers. Avoid thermal cycling and mechanical shock.
Packaging Options
- •ESD wafer cases
- •Vacuum sealed containers
- •Ultra-clean packaging
- •Custom protective handling
Request Silicon Carbide (SiC) Wafer
Get a custom quote or learn more about our silicon carbide (sic) wafer supply options.